cmpta29 surface mount high voltage npn silicon darlington transistor description: the central semiconductor cmpta29 is an npn silicon darlington transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring extremely high voltage and high gain. marking code: c29 maximum ratings: (t a =25c) symbol units collector-base voltage v cbo 100 v collector-emitter voltage v ces 100 v emitter-base voltage v ebo 12 v continuous collector current i c 500 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c) unless otherwise noted) symbol test conditions min max units i ces v ce =80v 500 na i cbo v cb =80v 100 na i ebo v be =10v 100 na bv ces i c =100a 100 v bv cbo i c =100a 100 v bv ebo i e =10a 12 v v ce(sat) i c =10ma, i b =10a 1.2 v v ce(sat) i c =100ma, i b =100a 1.5 v v be(on) v ce =5.0v, i c =100ma 2.0 v h fe v ce =5.0v, i c =10ma 10,000 h fe v ce =5.0v, i c =100ma 10,000 f t v ce =5.0v, i c =10ma, f=100mhz 125 mhz c ob v cb =10v, i e =0, f=1.0mhz 8.0 pf sot-23 case r4 (3-february 2010) www.centralsemi.com
cmpta29 surface mount high voltage npn silicon darlington transistor lead code: 1) base 2) emitter 3) collector marking code: c29 sot-23 case - mechanical outline www.centralsemi.com r4 (3-february 2010)
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